PD54003 STMicroelectronics, PD54003 Datasheet - Page 3

• Manufacturer Part Number: PD54003
• Description: RF MOSFET Power N-Ch 25 Volt 4 Amp
• Manufacturer: STMicroelectronics

Specifications of PD54003

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 52.8 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 25V
• Output Power (max): 3W(Min)
• Power Gain (typ)@vds: 12dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 1.7S
• Input Capacitance (typ)@vds: 59@7.5VpF
• Output Capacitance (typ)@vds: 43@7.5VpF
• Reverse Capacitance (typ): 4@7.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 52800mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
Gate-Source Voltage vs. Case Temperature
1.06
1.04
1.02
0.98
0.96
0.94
0.92
1000
100
10
1
1
-25
0
f = 1 M Hz
Vds= 10 V
0
Tc, CASE TEMPERATURE (°C)
VDD, DRAIN VOLTAGE (V)
5
25
50
10
I
D
= 0.5 A
75
Crs s
C o s s
C iss
I
D
= 0.25 A
I
D
I
= 1.5 A
D
= 1 A
I
D
= 2A
100
15
Drain Current vs. Gate Voltage
4
3
2
0
1
1
2
VGS, GATE-SOURCE VOLTAGE (V)
3
PD54003 - PD54003S
4
5
Vds = 10 V
6
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