PD54003 STMicroelectronics, PD54003 Datasheet - Page 4

• Manufacturer Part Number: PD54003
• Description: RF MOSFET Power N-Ch 25 Volt 4 Amp
• Manufacturer: STMicroelectronics

Specifications of PD54003

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 52.8 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 25V
• Output Power (max): 3W(Min)
• Power Gain (typ)@vds: 12dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 1.7S
• Input Capacitance (typ)@vds: 59@7.5VpF
• Output Capacitance (typ)@vds: 43@7.5VpF
• Reverse Capacitance (typ): 4@7.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 52800mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PD54003 - PD54003S
TYPICAL PERFORMANCE
Output Power vs. Input Power
Drain Efficiency vs. Output Power
Output Power vs. Bias Current
4/18
5
4
3
2
0
80
70
60
50
40
30
20
10
3.8
3.7
3.6
3.5
3.4
3.3
3.2
2.9
1
3.1
3
0
0
0
100
0.1
200
1
Pout, OUTPUT POWER (W)
IDQ, BIAS CURRENT (mA)
Pin, INPUT POWER (W)
300
480 MHz
0.2
400
2
520 MHz
500 MHz
500 MHz
500
0.3
600
3
Vdd= 7.5 V
Idq= 50 mA
Vdd= 7.5 V
Idq= 50 mA
Pin= 23.3 dBm
Vdd= 7.5 V
520 MHz
PD54003
480 MHz
520 MHz
500 MHz
480 MHz
700
800
0.4
4
Power Gain vs. Output Power
Return Loss vs. Output Power
Drain Voltage vs. Bias Current
70
60
50
40
30
20
10
16
14
12
10
-10
-20
-30
-40
8
6
0
0
0
0
100
Vdd= 7.5 V
Idq= 50 mA
200
1
1
480 MHz
500 MHz
520 MHz
IDQ, BIAS CURRENT (mA)
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
300
400
2
2
520 MHz
480 MHz
500
480 MHz
500 MHz
600
3
3
Pin= 23.3 dBm
Vdd= 7.5 V
520 MHz
Vdd= 7.5 V
Idq= 50 mA
500 MHz
700
800
4
4