PD54003 STMicroelectronics, PD54003 Datasheet - Page 9

RF MOSFET Power N-Ch 25 Volt 4 Amp

PD54003

Manufacturer Part Number
PD54003
Description
RF MOSFET Power N-Ch 25 Volt 4 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD54003

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
52.8 W
Maximum Operating Temperature
+ 165 C
Package / Case
PowerSO-10-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
25V
Output Power (max)
3W(Min)
Power Gain (typ)@vds
12dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
1.7S
Input Capacitance (typ)@vds
59@7.5VpF
Output Capacitance (typ)@vds
43@7.5VpF
Reverse Capacitance (typ)
4@7.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
52800mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
PD54003
Manufacturer:
ST
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PD54003 - PD54003S
TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
6.4 inches
9/18

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