NE25118-U73 NEC, NE25118-U73 Datasheet
NE25118-U73
Specifications of NE25118-U73
Related parts for NE25118-U73
NE25118-U73 Summary of contents
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... AVAILABLE IN TAPE & REEL OR BULK • LOW PACKAGE HEIGHT: 1.0 mm MAX DESCRIPTION The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate 1 to Source Voltage G1S V Gate 2 to Source Voltage G2S I Drain Current D P Total Power Dissipation T T Channel Temperature CH T Storage ...
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... TYPICAL PERFORMANCE CURVES INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE 2 G2S D 1 G2S D -1.0 0 Gate 2 to Source Voltage, V Note: 1. Initial bias conditions. V G1S specified drain current. NE25118 G2S D FREQUENCY S 11 (MHz) MAG ANG 100 0.999 -3.3 200 1.000 -7.2 300 0.998 -9.3 400 0 ...
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... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION PART NUMBER NE25118 +0.10 0.3 -0.05 NE25118-T1 (LEADS 0.65 1.3 0.65 +0.10 0.15 -0.05 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS AVAILABILITY ...