BYQ30E-200,127 NXP Semiconductors, BYQ30E-200,127 Datasheet - Page 4

• Manufacturer Part Number: BYQ30E-200,127
• Description: DIODE RECT 200V 16A SOT78
• Manufacturer: NXP Semiconductors

Specifications of BYQ30E-200,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 16A
• Current - Reverse Leakage @ Vr: 30µA @ 200V
• Current - Average Rectified (io) (per Diode): 16A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 25 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 88 A
• Reverse Current Ir: 30 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934053870127; BYQ30E-200; BYQ30E-200

Philips Semiconductors
October 1998
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
20
15
10
Fig.8. Maximum I
100
Fig.7. Maximum t
5
0
0.1
10
10
0
1
1
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
1
1
trr / ns
Irrm / A
I
F
0.5
= f(V
Forward voltage, VF (V)
typ
F
rrm
); parameter T
rr
dIF/dt (A/us)
-dIF/dt (A/us)
IF=1A
at T
at T
10
10
1
j
j
= 25 ˚C; per diode
IF=10A
IF=10A
= 25 ˚C; per diode
max
1.5
j
IF=1A
BYQ30
100
100
2
4
BYQ30E, BYQ30EB, BYQ30ED series
Fig.11. Transient thermal impedance; per diode;
Fig.10. Maximum Q
0.001
100
1.0
0.01
10
0.1
10
1.0
1
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
10us
100us
Z
pulse width, tp (s)
th j-mb
IF=10A
-dIF/dt (A/us)
1ms
2A
1A
5A
s
at T
= f(t
10
P
D
10ms 100ms
j
p
= 25 ˚C; per diode
).
t
p
Product specification
T
D =
BYQ30E
T
t
p
t
1s
Rev 1.200
100
10s