BYQ30E-200,127 NXP Semiconductors, BYQ30E-200,127 Datasheet - Page 7

DIODE RECT 200V 16A SOT78

BYQ30E-200,127

Manufacturer Part Number
BYQ30E-200,127
Description
DIODE RECT 200V 16A SOT78
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYQ30E-200,127

Package / Case
TO-220AB-3
Voltage - Forward (vf) (max) @ If
1.25V @ 16A
Current - Reverse Leakage @ Vr
30µA @ 200V
Current - Average Rectified (io) (per Diode)
16A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.25 V
Recovery Time
25 ns
Forward Continuous Current
16 A
Max Surge Current
88 A
Reverse Current Ir
30 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934053870127
BYQ30E-200
BYQ30E-200

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYQ30E-200,127
Manufacturer:
NXP Semiconductors
Quantity:
4 000
Philips Semiconductors
MECHANICAL DATA
MOUNTING INSTRUCTIONS
Notes
1. Plastic meets UL94 V0 at 1/8".
October 1998
Rectifier diodes
ultrafast, rugged
Dimensions in mm
Net Mass: 1.1 g
Dimensions in mm
2.285 (x2)
1
Fig.16. SOT428 : minimum pad sizes for surface mounting .
6.73 max
tab
2
Fig.15. SOT428 : centre pin connected to tab.
3
0.8 max
(x2)
2.15
2.5
6.22 max
7.0
1.1
0.5 min
7
BYQ30E, BYQ30EB, BYQ30ED series
10.4 max
2.38 max
0.93 max
4.57
7.0
0.5
0.3
seating plane
1.5
4 min
0.5
4.6
Product specification
5.4
Rev 1.200

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