MBR20H100CTG-E3/45 Vishay, MBR20H100CTG-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MBR20H100CTG-E3/45
• Description: DIODE SCHOTT 20A 100V DUAL TO220
• Manufacturer: Vishay

Specifications of MBR20H100CTG-E3/45

• Voltage - Forward (vf) (max) @ If: 840mV @ 20A
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 20 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.93 V
• Maximum Reverse Leakage Current: 3.5 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88856
Revision: 25-Mar-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.1
20
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
T
Instantaneous Forward Voltage (V)
J
0.3
= 150 °C
40
T
T
J
0.5
J
= 175 °C
= 125 °C
[e-mail], [e-mail], [e-mail]
For technical questions within your region, please contact one of the following:
60
T
T
0.160 (4.06)
0.140 (3.56)
J
T
J
T
= 100 °C
J
T
0.057 (1.45)
0.045 (1.14)
J
= 25 °C
T
0.7
= - 40 °C
0.105 (2.67)
0.095 (2.41)
J
0.104 (2.65)
0.096 (2.45)
= 125 °C
J
= 100 °C
= 25 °C
80
0.415 (10.54) MAX.
0.9
0.370 (9.40)
0.360 (9.14)
1
PIN
2
100
1.1
3
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.635 (16.13)
0.625 (15.87)
0.113 (2.87)
0.103 (2.62)
0.154 (3.91)
0.148 (3.74)
TO-220AB
MBR20H90CTG & MBR20H100CTG
1.148 (29.16)
1.118 (28.40)
Figure 6. Typical Transient Thermal Impedance Per Diode
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1000
0.022 (0.56)
0.014 (0.36)
100
100
0.560 (14.22)
0.530 (13.46)
0.1
10
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
0.1
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.175 (4.44)
t - Pulse Duration (s)
0.055 (1.39)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
Reverse Voltage (V)
1
1
10
10
www.vishay.com
100
100
3