BAV70,235 NXP Semiconductors, BAV70,235 Datasheet - Page 5

• Manufacturer Part Number: BAV70,235
• Description: DIODE DUAL 100V 215MA H-S SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAV70,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933184910235; BAV70 /T3; BAV70 /T3

NXP Semiconductors
7. Characteristics
BAV70_SER_7
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
d
Pulse test: t
When switched from I
When switched from I
= 25 C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
p
300 s;
Rev. 07 — 27 November 2007
F
F
= 10 mA to I
= 10 mA; t
0.02.
r
= 20 ns.
R
= 10 mA; R
Conditions
I
I
I
I
V
V
V
V
V
F
F
F
F
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
= 0 V; f = 1 MHz
L
= 100 ; measured at I
j
j
= 150 C
= 150 C
High-speed switching diodes
[1]
[2]
[3]
BAV70 series
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
715
855
1
1.25
30
0.5
30
100
1.5
4
1.75
Unit
mV
mV
V
V
nA
pF
ns
V
5 of 15
A
A
A