BAV70,235 NXP Semiconductors, BAV70,235 Datasheet - Page 7

• Manufacturer Part Number: BAV70,235
• Description: DIODE DUAL 100V 215MA H-S SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAV70,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933184910235; BAV70 /T3; BAV70 /T3

NXP Semiconductors
8. Test information
BAV70_SER_7
Product data sheet
Fig 5. Reverse recovery time test circuit and waveforms
Fig 6. Forward recovery voltage test circuit and waveforms
(1) I
R
V = V
S
R
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Input signal: forward pulse rise time t
S
R
= 50
R
= 50
= 1 mA
I
I
F
R
S
1 k
D.U.T.
450
I
F
r
= 0.35 ns
D.U.T.
OSCILLOSCOPE
R
i
= 50
r
r
OSCILLOSCOPE
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
mga881
SAMPLING
R
i
Rev. 07 — 27 November 2007
= 50
I
V
R
10 %
t
r
t
10 %
r
90 %
input signal
90 %
input signal
t
p
t
p
p
p
= 100 ns; duty cycle
100 ns; duty cycle
t
High-speed switching diodes
t
BAV70 series
V
I
F
V FR
= 0.05
output signal
0.005
output signal
© NXP B.V. 2007. All rights reserved.
t rr
mga882
(1)
t
t
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