BAV23C,215 NXP Semiconductors, BAV23C,215 Datasheet - Page 5

• Manufacturer Part Number: BAV23C,215
• Description: DIODE SW HI-VOLT DUAL SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAV23C,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Current - Average Rectified (io) (per Diode): 225mA (DC)
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 125 mA
• Max Surge Current: 625 mA
• Configuration: Dual Common Cathode
• Recovery Time: 50 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061767215

NXP Semiconductors
BAV23_SER_7
Product data sheet
Fig 1.
Fig 3.
(mA)
I
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
F
600
400
200
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.4
0.8
(1)
(μA)
I
R
10
10
10
10
10
10
10
−1
−2
−3
−4
−5
1.2
1
(2)
(3)
(4)
2
0
All information provided in this document is subject to legal disclaimers.
V
006aab212
F
(V)
50
1.6
Rev. 07 — 19 March 2010
(3)
(1)
(2)
(4)
100
Fig 2.
150
I
FSM
(A)
10
10
10
−1
1
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
200
j
= 25 C; prior to surge
006aab213
V
R
(V)
250
Dual high-voltage switching diodes
10
10
BAV23 series
2
10
© NXP B.V. 2010. All rights reserved.
3
t
p
(μs)
mbg703
10
4
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