BAS16VV,115 NXP Semiconductors, BAS16VV,115 Datasheet - Page 18

• Manufacturer Part Number: BAS16VV,115
• Description: DIODE SW 100V 200MA H-S SOT666
• Manufacturer: NXP Semiconductors

Specifications of BAS16VV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Triple Parallel
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25@0.15AV
• Operating Temp Range: -65C to 150C
• Package Type: SOT-666
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058225115; BAS16VV T/R; BAS16VV T/R

NXP Semiconductors
12. Revision history
Table 10.
BAS16_SER_5
Product data sheet
Document ID
BAS16_SER_5
Modifications:
BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
Revision history
Release date
20080825
20011010
20050415
20070308
20030623
19980120
20070420
19990506
20040204
19980831
•
•
•
•
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 5 “Marking
Table 6 “Limiting
V
Table 6 “Limiting
V
Table 8
Table 8
and T
Table 8
Section 13 “Legal
RRM
R
maximum value from 75 V to 100 V
j
maximum value from 85 V to 100 V
= 25 C
“Characteristics”: change of I
“Characteristics”: change of I
“Characteristics”: change of I
Data sheet status
Product data sheet
Product specification
Product data sheet
Product data sheet
Product specification
Product specification
Product data sheet
Product specification
Product specification
Product specification
values”: for BAS16, BAS16T, BAS16W and BAS516 change of
values”: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of
Rev. 05 — 25 August 2008
codes”: marking code amended for BAS16W
information”: updated
R
R
R
condition V
maximum value from 1.0 A to 0.5 A for V
condition V
Change notice
-
-
-
-
-
-
-
-
-
-
R
R
from 75 V to 80 V for T
from 75 V to 80 V for T
High-speed switching diodes
BAS16 series
Supersedes
BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
BAS16_3
-
-
-
-
BAS16VV_BAS16VY_2
BAS16W_3
BAS316_3
-
© NXP B.V. 2008. All rights reserved.
j
j
= 25 C
= 150 C
R
= 80 V
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