BAT754L,115 NXP Semiconductors, BAT754L,115 Datasheet

DIODE SCHTK TRPL 30V 200MASOT363

BAT754L,115

Manufacturer Part Number
BAT754L,115
Description
DIODE SCHTK TRPL 30V 200MASOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BAT754L115.pdf (7 pages)

Specifications of BAT754L,115

Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
750mV @ 100mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Triple Parallel
Forward Voltage Drop
0.75 V at 0.1 A
Maximum Reverse Leakage Current
2 uA at 25 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056331115
BAT754L T/R
BAT754L T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BAT754L,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAT754L
Schottky barrier triple diode
Product data sheet
2001 Jan 18

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BAT754L,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BAT754L Schottky barrier triple diode Product data sheet DISCRETE SEMICONDUCTORS MBD128 2001 Jan 18 ...

Page 2

... NXP Semiconductors Schottky barrier triple diode FEATURES • Very low forward voltage • Guard ring protected • Low diode capacitance • Three independent diodes in a small plastic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • ...

Page 3

... NXP Semiconductors Schottky barrier triple diode THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Refer to SOT363 standard mounting conditions. ELECTRICAL CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER Per diode V forward voltage F I reverse current R C diode capacitance ...

Page 4

... NXP Semiconductors Schottky barrier triple diode 3 10 handbook, halfpage I F (mA (1) (2) ( 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 15 handbook, halfpage C d (pF ° MHz; T amb Fig.4 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier triple diode PACKAGE OUTLINE Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2001 Jan scale 2.2 1.35 2.2 1.3 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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