BAT754L,115 NXP Semiconductors, BAT754L,115 Datasheet - Page 3

• Manufacturer Part Number: BAT754L,115
• Description: DIODE SCHTK TRPL 30V 200MASOT363
• Manufacturer: NXP Semiconductors

Specifications of BAT754L,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 750mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Triple Parallel
• Forward Voltage Drop: 0.75 V at 0.1 A
• Maximum Reverse Leakage Current: 2 uA at 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056331115; BAT754L T/R; BAT754L T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Refer to SOT363 standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: pulse width = 300 μs; δ = 0.02.
2001 Jan 18
R
Per diode
V
I
C
amb
SYMBOL
SYMBOL
R
F
Schottky barrier triple diode
th j-a
d
= 25 °C; unless otherwise specified.
thermal resistance from junction to ambient
forward voltage
reverse current
diode capacitance
PARAMETER
PARAMETER
3
note 1
note 1; see Fig.2
V
V
R
R
I
I
I
I
I
F
F
F
F
F
= 25 V; note 1; see Fig.3
= 1 V; f = 1 MHz; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
CONDITIONS
CONDITIONS
200
260
340
420
750
2
10
VALUE
MAX.
416
Product data sheet
BAT754L
mV
mV
mV
mV
mV
μA
pF
UNIT
UNIT
K/W