BAT160S,115 NXP Semiconductors, BAT160S,115 Datasheet

DIODE SCHOTTK DUAL 60V 1A SOT223

BAT160S,115

Manufacturer Part Number
BAT160S,115
Description
DIODE SCHOTTK DUAL 60V 1A SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT160S,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Voltage - Forward (vf) (max) @ If
650mV @ 1A
Current - Reverse Leakage @ Vr
350µA @ 60V
Current - Average Rectified (io) (per Diode)
1A (DC)
Voltage - Dc Reverse (vr) (max)
60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
1 A
Max Surge Current
10 A
Configuration
Dual Series
Forward Voltage Drop
0.85 V @ 2 A
Maximum Reverse Leakage Current
350 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934051420115
BAT160S T/R
BAT160S T/R
Product data sheet
Supersedes data of 1999 Mar 26
DATA SHEET
BAT160 series
Schottky barrier double diodes
k, halfpage
DISCRETE SEMICONDUCTORS
M3D087
1999 Sep 20

Related parts for BAT160S,115

BAT160S,115 Summary of contents

Page 1

DATA SHEET k, halfpage BAT160 series Schottky barrier double diodes Product data sheet Supersedes data of 1999 Mar 26 DISCRETE SEMICONDUCTORS M3D087 1999 Sep 20 ...

Page 2

... NXP Semiconductors Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. ...

Page 3

... NXP Semiconductors Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER Per diode V continuous reverse voltage R I continuous forward current F I non-repetitive peak forward current FSM I non-repetitive peak reverse current RSM T storage temperature ...

Page 4

... NXP Semiconductors Schottky barrier double diodes GRAPHICAL DATA 4 10 handbook, halfpage I F (mA (2) (1) (3) ( 0.2 0.4 = 125 °C. (1) T (3) T amb = 100 °C. (2) T (4) T amb Fig.5 Forward current as a function of forward voltage; typical values handbook, halfpage C d (pF ° MHz; T amb Fig ...

Page 5

... NXP Semiconductors Schottky barrier double diodes PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 1999 Sep scale 0.32 6 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

Related keywords