BAT160S,115 NXP Semiconductors, BAT160S,115 Datasheet - Page 5

• Manufacturer Part Number: BAT160S,115
• Description: DIODE SCHOTTK DUAL 60V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BAT160S,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Voltage - Forward (vf) (max) @ If: 650mV @ 1A
• Current - Reverse Leakage @ Vr: 350µA @ 60V
• Current - Average Rectified (io) (per Diode): 1A (DC)
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Dual Series
• Forward Voltage Drop: 0.85 V @ 2 A
• Maximum Reverse Leakage Current: 350 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934051420115; BAT160S T/R; BAT160S T/R

NXP Semiconductors
PACKAGE OUTLINE
1999 Sep 20
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
Schottky barrier double diodes
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
1
e
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
5
2
c
H
7.3
6.7
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
BAT160 series
L
p
Q
Product data sheet
X
ISSUE DATE
97-02-28
99-09-13
v
A
M
A
SOT223