BYV32E-150,127 NXP Semiconductors, BYV32E-150,127 Datasheet - Page 2

• Manufacturer Part Number: BYV32E-150,127
• Description: DIODE RECT 150V 20A SOT78
• Manufacturer: NXP Semiconductors

Specifications of BYV32E-150,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 30µA @ 150V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 150V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 150 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 25 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 137 A
• Reverse Current Ir: 30 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934011680127; BYV32E-150; BYV32E-150

Philips Semiconductors
ESD LIMITING VALUE
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
August 2001
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
SYMBOL PARAMETER
V
I
Q
t
t
V
R
rr1
rr2
C
th j-mb
th j-a
F
fr
s
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
Electrostatic discharge
capacitor voltage
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
j
= 25 ˚C unless otherwise stated
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
CONDITIONS
I
I
V
V
I
I
-dI
I
I
F
F
F
F
F
F
R
R
= 8 A; T
= 20 A
= 2 A; V
= 1 A; V
= 0.5 A to I
= 1 A; dI
F
= V
= V
/dt = 100 A/µs
RWM
RWM
; T
j
R
R
F
2
= 150˚C
/dt = 10 A/µs
≥ 30 V; -dI
≥ 30 V;
j
R
= 100 ˚C
= 1 A; I
rec
F
/dt = 20 A/µs
= 0.25 A
BYV32E, BYV32EB series
MIN.
MIN.
-
-
-
-
-
-
-
-
MIN.
-
-
-
-
-
TYP.
0.72
1.00
0.2
20
10
TYP. MAX. UNIT
6
8
1
Product specification
60
50
-
-
MAX.
MAX.
8
0.85
1.15
12.5
0.6
30
25
20
2.4
1.6
-
-
-
Rev 1.300
UNIT
UNIT
K/W
K/W
K/W
K/W
mA
nC
kV
µA
ns
ns
V
V
V