BYV32E-200,127 NXP Semiconductors, BYV32E-200,127 Datasheet

DIODE FAST DUAL 20A 200V TO220AB

BYV32E-200,127

Manufacturer Part Number
BYV32E-200,127
Description
DIODE FAST DUAL 20A 200V TO220AB
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BYV32E-200,127

Package / Case
TO-220AB-3
Voltage - Forward (vf) (max) @ If
1.15V @ 20A
Current - Reverse Leakage @ Vr
30µA @ 200V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V
Recovery Time
25 ns
Forward Continuous Current
20 A
Max Surge Current
137 A
Reverse Current Ir
30 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1667-5
934011690127
BYV32E-200
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
Table 1.
Symbol Parameter
V
I
I
V
Dynamic characteristics
t
Static characteristics
V
O(AV)
RRM
rr
RRM
ESD
F
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Output rectifiers in high-frequency
switched-mode power supplies
BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 27 February 2009
repetitive peak
reverse voltage
average output
current
repetitive peak
reverse current
electrostatic
discharge voltage
reverse recovery
time
forward voltage
Quick reference
Conditions
square-wave pulse; δ = 0.5;
T
conducting; see
see
t
HBM; C = 250 pF; R = 1.5
kΩ; all pins
I
dI
T
see
I
T
measured at reverse current
= 0.25 A; see
I
Figure 4
p
F
R
F
mb
j
j
F
= 2 µs; δ = 0.001
= 1 A; V
= 25 °C; ramp recovery;
= 25 °C; step recovery;
= 8 A; T
= 1 A; I
/dt = 100 A/µs;
Figure 2
Figure 5
≤ 115 °C; both diodes
F
j
R
= 0.5 A;
= 150 °C; see
= 30 V;
Figure 6
Figure
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1;
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
20
10
0.72
Max
200
20
0.2
8
25
20
0.85
Unit
V
A
A
kV
ns
ns
V

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BYV32E-200,127 Summary of contents

Page 1

... BYV32E-200 Dual rugged ultrafast rectifier diode 200 V Rev. 04 — 27 February 2009 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance 1 ...

Page 2

... SC-46 TO-220AB BYV32E-200_4 Product data sheet Dual rugged ultrafast rectifier diode 200 V Simplified outline SOT78 (TO-220AB; SC-46) Rev. 04 — 27 February 2009 BYV32E-200 Graphic symbol sym125 Version SOT78 © NXP B.V. 2009. All rights reserved ...

Page 3

... HBM 250 pF 1.5 kΩ; all pins 003aac978 15 P tot ( (A) F(AV) Fig 2. Forward power dissipation as a function of average forward current; square waveform; maximum values Rev. 04 — 27 February 2009 BYV32E-200 Min Max - 200 - 200 - 200 - 20 Figure °C; per - 137 - 125 - 0.2 - ...

Page 4

... ° /dt = 100 A/µ ramp recovery °C; see Figure 0 step recovery measured at reverse current = 0. °C; see Figure / A/µ °C; see Figure 7 Rev. 04 — 27 February 2009 BYV32E-200 Min Typ Max - - 1 2 003aac980 t p δ (s) p Min Typ Max - 1 1.15 - 0.72 0.85 - 0.2 0.6 ...

Page 5

... Dual rugged ultrafast rectifier diode 200 V 003aac981 1.2 1.6 Fig 5. Reverse recovery definitions; ramp recovery V ( time 0. 003aac563 Fig 7. Forward recovery definitions Rev. 04 — 27 February 2009 BYV32E-200 © NXP B.V. 2009. All rights reserved. time 25 % 100 % 003aac562 time V FRM time 001aab912 ...

Page 6

... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 04 — 27 February 2009 BYV32E-200 mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...

Page 7

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Package outline updated. • Type number BYV32E-200 separated from data sheet BYV32E_SERIES_3 BYV32E_SERIES_3 20010301 BYV32E_SERIES_2 19980701 BYV32EB_SERIES_1 19960801 ...

Page 8

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 27 February 2009 BYV32E-200 © NXP B.V. 2009. All rights reserved ...

Page 9

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 February 2009 Document identifier: BYV32E-200_4 All rights reserved. ...

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