BYV32E-200,127 NXP Semiconductors, BYV32E-200,127 Datasheet - Page 6

• Manufacturer Part Number: BYV32E-200,127
• Description: DIODE FAST DUAL 20A 200V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV32E-200,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 30µA @ 200V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 25 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 137 A
• Reverse Current Ir: 30 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1667-5; 934011690127; BYV32E-200

NXP Semiconductors
7. Package outline
Fig 8.
BYV32E-200_4
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT
mm
VERSION
OUTLINE
Package outline SOT78 (TO-220AB)
SOT78
4.7
4.1
A
1.40
1.25
A
1
0.9
0.6
b
IEC
b
1.6
1.0
1
(2)
D
L
b
L
1.3
1.0
2
D
1
(2)
(1)
1
b
b
3-lead TO-220AB
(3×)
(2×)
1
2
(2)
(2)
0.7
0.4
JEDEC
c
1
16.0
15.2
REFERENCES
e
D
E
p
Rev. 04 — 27 February 2009
2
e
6.6
5.9
D
0
1
3
10.3
JEITA
SC-46
b(3×)
9.7
E
L
scale
2
q
5
(1)
2.54
e
Dual rugged ultrafast rectifier diode, 20 A, 200 V
15.0
12.8
10 mm
L
mounting
L
3.30
2.79
base
1
(1)
max.
L
3.0
2
(1)
Q
A
3.8
3.5
p
A
PROJECTION
EUROPEAN
1
c
3.0
2.7
q
BYV32E-200
2.6
2.2
Q
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
08-04-23
08-06-13
SOT78
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