BAV103,115 NXP Semiconductors, BAV103,115 Datasheet - Page 4
![DIODE SW 200V 250MA SOD80C](/photos/5/24/52492/568-llds_sod80c__sml.jpg)
BAV103,115
Manufacturer Part Number
BAV103,115
Description
DIODE SW 200V 250MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet
1.BAV103115.pdf
(11 pages)
Specifications of BAV103,115
Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
General Purpose Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
0.25 A
Max Surge Current
9 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1618-2
933699360115
BAV103 T/R
933699360115
BAV103 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV103,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BAV102_BAV103
Product data sheet
Fig 1.
Fig 3.
(μA)
I
(mA)
R
(1) T
(2) T
(3) T
10
10
600
I
400
200
10
10
F
10
−1
−2
0
1
3
2
0
Forward current as a function of forward
voltage
0
V
Solid line: maximum values
Dotted line: typical values
Reverse current as a function of junction
temperature
amb
amb
amb
R
= V
= 150 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
Rmax
(1)
100
1
(2)
T
V
j
F
(°C)
(3)
(V)
All information provided in this document is subject to legal disclaimers.
mbg459
mgd009
200
2
Rev. 4 — 6 August 2010
Fig 2.
Fig 4.
I
(pF)
FSM
(A)
C
10
10
d
1.6
1.4
1.2
1.0
0.8
10
−1
1
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
j
= 25 °C; prior to surge
Single general-purpose switching diodes
10
amb
BAV102; BAV103
= 25 °C
10
10
2
V
10
R
© NXP B.V. 2010. All rights reserved.
3
(V)
t
p
(μs)
mbg703
mgd005
10
20
4
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