RB521S-30TE61 Rohm Semiconductor, RB521S-30TE61 Datasheet
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Manufacturer Part Number
RB521S-30TE61
Description
DIODE SCHOTTKY 30V 200MA SOD-523
Manufacturer
Rohm Semiconductor
Specifications of RB521S-30TE61
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
500mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
30µA @ 10V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
200mA
Forward Voltage Vf Max
500mV
Forward Surge Current Ifsm Max
1A
Diode Case Style
SOD-523
No. Of Pins
2
Svhc
No SVHC
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
30 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB521S-30TE61TR
Available stocks
Part Number:
RB521S-30TE61
Part Number:
RB521S-30TE61
Part Number:
RB521S-30TE61
Part Number:
RB521S-30TE61
Diodes
Schottky barrier diode
RB521S-30
Low current rectification
1) Ultra Small mold type. (EMD2)
2) Low V
3) High reliability.
Silicon epitaxial planar
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Electrical characteristics (Ta=25°C)
Forward voltage
Reverse current
F
Parameter
Parameter
Symbol
V
I
R
F
JEITA : SC-79
J
ROHM : EMD2
External dimensions (Unit : mm)
EDEC :SOD-523
Taping specifications (Unit : mm)
0.8±0.05
0.3±0.05
dot (year week factory)
Min.
-
-
0.95±0.06
4.0±0.1
0
Symbol
Tstg
I
V
FSM
Io
Tj
Typ.
2.0±0.05
R
Empty pocket
-
-
空ポケット
0.6±0.1
4.0±0.1
Max.
0.50
30
-40 to +125
0.12±0.05
φ1.5±0.05
Limits
200
125
30
1
Unit
µA
2.0±0.05
V
φ0.5
Structure
Land size figure (Unit : mm)
I
V
F
R
=200mA
=10V
Unit
mA
℃
℃
V
A
Conditions
EMD2
Rev.C
RB521S-30
0.8
0.2
0.2±0.05
0.76±0.05
1/3
Related parts for RB521S-30TE61
RB521S-30TE61 Summary of contents
... Empty pocket 0 Limits Symbol 200 FSM 125 Tj -40 to +125 Tstg Min. Typ. Max 0. RB521S-30 Land size figure (Unit : mm) 0.8 EMD2 Structure 0.2±0.05 0.2 φ0.5 2.0±0.05 0.76±0.05 Unit ℃ ℃ Conditions Unit V I =200mA F V =10V µA R Rev ...
... NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.2 0.15 D=1/2 DC Sin(θ＝180) 0.1 0.05 0 1000 0 0.1 0.2 0.3 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS RB521S-30 100 Ta=125℃ Ta=75℃ Ta=25℃ 10 Ta=-25℃ REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:14.33pF 12 ...
... VR=15V T Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180 100 AMBIENT TEMPERATURE：Ta(℃) Derating Curve 0 D=t/T 0.4 DC VR=15V Tj=125℃ T 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 125 100 CASE TEMPARATURE：Tc(℃) Derating Curve RB521S- 125 Rev.C 3/3 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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