RB520S-30TE61 Rohm Semiconductor, RB520S-30TE61 Datasheet
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Manufacturer Part Number
RB520S-30TE61
Description
DIODE SCHOTTKY 30V 200MA SOD-523
Manufacturer
Rohm Semiconductor
Specifications of RB520S-30TE61
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
600mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
1µA @ 10V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
200mA
Forward Voltage Vf Max
600mV
Forward Surge Current Ifsm Max
1A
Diode Case Style
SOD-523
No. Of Pins
2
Svhc
No SVHC
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.6 V
Maximum Reverse Leakage Current
1 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB520S-30TE61TR
Available stocks
Part Number:
RB520S-30TE61
Part Number:
RB520S-30TE61
Manufacturer:
Rohm Semiconductor
Part Number:
RB520S-30TE61
Part Number:
RB520S-30TE61
Part Number:
RB520S-30TE61
Low current rectification
1) Ultra Small mold type. (EMD2)
2) Low I
3) High reliability.
Silicon epitaxial planar
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz ・1cyc)
Junction temperature
Storage temperature
Forward voltage
Reverse current
RB520S-30
Schottky barrier diode
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R
.
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
Tstg
I
V
FSM
V
Io
Tj
I
R
R
F
Dimensions (Unit : mm)
JEITA : SC-79
ROHM : EMD2
JEDEC :SOD-523
Min.
0.8±0.05
0.3±0.05
0.90±0.05
-
-
0.95±0.06
4.0±0.1
dot (year week factory)
-40 to +125
0
Limits
200
125
30
Typ.
1/3
1
-
-
2.0±0.05
Empty pocket
空ポケット
Max.
0.6
1
4.0±0.1
0.6±0.1
φ1.5±0.05
φ1.55±0.05
Unit
Unit
mA
μA
°C
°C
0.12±0.05
V
A
V
I
V
F
2.0±0.05
=200mA
R
=10V
Structure
EMD2
Land size figure (Unit : mm)
Conditions
φ0.5
Data Sheet
0.8
2011.03 - Rev.D
0.2
0.2±0.05
0.75±0.05
0.76±0.05
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RB520S-30TE61 Summary of contents
... Schottky barrier diode RB520S-30 Applications Low current rectification Features 1) Ultra Small mold type. (EMD2) 2) Low High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz ・1cyc) Junction temperature Storage temperature ...
... RB520S-30 1000 Ta=125℃ 100 Ta=75℃ 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 530 Ta=25℃ IF=200mA 520 n=30pcs 510 500 490 AVE:507.6mV 480 VF DISPERSION MAP 30 25 Ifsm 8.3ms 20 1cyc 15 AVE:5 ...
... RB520S-30 0 D=t/T VR=15V 0.3 Tj=125℃ T D=1/2 0.2 0.1 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating curve (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 D=t/T 0.4 VR VR=15V T Tj=125℃ DC 0.3 D=1/2 0.2 0.1 Sin(θ＝180) ...
ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...
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