RB520S-30FTE61 Rohm Semiconductor, RB520S-30FTE61 Datasheet

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... Schottky barrier diode RB520S-30 Applications Low current rectification Features 1) Ultra Small mold type. (EMD2) 2) Low High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz ・1cyc) Junction temperature Storage temperature  ...

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... RB520S-30 1000 Ta=125℃ 100 Ta=75℃ 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 530 Ta=25℃ IF=200mA 520 n=30pcs 510 500 490 AVE:507.6mV 480 VF DISPERSION MAP 30 25 Ifsm 8.3ms 20 1cyc 15 AVE:5 ...

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... RB520S-30 0 D=t/T VR=15V 0.3 Tj=125℃ T D=1/2 0.2 0.1 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating curve (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 D=t/T 0.4 VR VR=15V T Tj=125℃ DC 0.3 D=1/2 0.2 0.1 Sin(θ＝180) ...

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ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...