RB160M-60TR Rohm Semiconductor, RB160M-60TR Datasheet - Page 2

• Manufacturer Part Number: RB160M-60TR
• Description: DIODE SCHOTTKY 60V 1A SOD123
• Manufacturer: Rohm Semiconductor

Specifications of RB160M-60TR

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 40pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Repetitive Reverse Voltage Vrrm Max: 60V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 550mV
• Forward Surge Current Ifsm Max: 30A
• Diode Case Style: SOD-123
• No. Of Pins: 2
• Svhc: No SVHC
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Diodes
Electrical characteristic curves (Ta=25°C)
0.001
530
520
510
500
490
480
0.01
150
100
200
150
100
0.1
50
50
0
1
0
1
0
Ta=125℃
100
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
VF DISPERSION MAP
IFSM DISRESION MAP
Ta=75℃
200
AVE:495.1mV
TIME:t(ms)
AVE:85.0A
300
10
Ifsm
Ifsm
400
8.3ms
Ta=-25℃
Ta=25℃
t
Ta=25℃
500
n=30pcs
IF=1A
1cyc
600
100
10000
1000
1000
100
0.01
100
100
0.1
90
80
70
60
50
40
30
20
10
30
25
20
15
10
10
0.1
10
0
5
0
1
1
0.001
0
Mounted on epoxy board
IM=10mA
10
0.01
1ms
REVERSE VOLTAGE：VR(V)
Rth-t CHARACTERISTICS
VR-IR CHARACTERISTICS
300us
trr DISPERSION MAP
IR DISPERSION MAP
20
time
0.1
AVE:6.966uA
AVE:11.7ns
TIME:t(s)
IF=0.5A
30
1
40
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
Irr=0.25*IR
Ta=25℃
n=10pcs
IF=0.5A
IR=1A
Rth(j-a)
Ta=25℃
n=30pcs
VR=60V
Rth(j-c)
100
50
1000
60
1000
100
100
100
1.5
0.5
50
10
90
80
70
60
50
40
30
20
10
0
1
1
0
0
1
0
0
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
5
FORWARD CURRENT：Io(A)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Io-Pf CHARACTERISTICS
0.5
AVERAGE RECTIFIED
Ct DISPERSION MAP
NUMBER OF CYCLES
10
AVE:37.9pF
Ifsm
Rev.E
RB160M-60
10
15
1
8.3ms
D=1/2
20
1cyc
1.5
8.3ms
Ta=25℃
VR=10V
n=10pcs
f=1MHz
f=1MHz
25
DC
100
30
2
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