RB160M-40TR Rohm Semiconductor, RB160M-40TR Datasheet
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Manufacturer Part Number
RB160M-40TR
Description
DIODE SCHOTTKY 40V 1A SOD123
Manufacturer
Rohm Semiconductor
Specifications of RB160M-40TR
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
510mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
30µA @ 40V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
1A
Forward Voltage Vf Max
510mV
Forward Surge Current Ifsm Max
30A
Operating Temperature Range
-40°C To +150°C
Diode Case
RoHS Compliant
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Forward Voltage Drop
0.51 V
Maximum Reverse Leakage Current
30 uA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Diodes
Schottky barrier diode
RB160M-40
General rectification
1) Small power mold type. (PMDS)
2) Low I
3) High reliability.
Silicon epitaxial planar
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
R
.
Parameter
Parameter
Symbol
V
I
R
F
Dimensions (Unit : mm)
JEDEC :SOD-123
ROHM : PMDU
Taping specifications (Unit : mm)
Min.
-
-
Manufacture Date
1.6±0.1
0.9±0.1
1.81±0.1
4.0±0.1 2.0±0.05
Symbol
Typ.
0.46
4.0
Tstg
V
I
V
FSM
Io
Tj
RM
R
4.0±0.1
Max.
0.51
0.8±0.1
30
0.1±0.1
0.05
φ1.55±0.05
-40 to +150
φ1.0±0.1
Limits
150
40
40
30
Unit
1
µA
V
Structure
Land size figure (Unit : mm)
I
V
F
R
=1.0A
=40V
PMDU
Conditions
0.25±0.05
Unit
1.5MAX
℃
℃
1.2
Rev.E
RB160M-40
V
V
A
A
1/3
Related parts for RB160M-40TR
RB160M-40TR Summary of contents
... Limits Symbol FSM Tj -40 to +150 Tstg Min. Typ. Max. - 0.46 0.51 - 4.0 30 RB160M-40 Land size figure (Unit : mm) 1.2 PMDU Structure 0.25±0.05 1.5MAX Unit ℃ 150 ℃ Conditions Unit V I =1.0A F ...
... DISPERSION MAP Mounted on epoxy board 1000 IM=10mA IF=0.5A Rth(j-a) 1ms time 100 300us Rth(j- 0.1 100 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RB160M-40 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 300 Ta=25℃ 290 f=1MHz 280 VR=0V n=10pcs 270 AVE:279.7pF ...
... VR t D=t/T 2 VR=20V DC T Tj=150℃ 1.5 D=1/2 1 0.5 Sin(θ=180 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) RB160M- 2 D=t/T 2 VR=20V DC T Tj=150℃ 1.5 D=1/2 1 0.5 Sin(θ=180 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) Rev ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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