RB051L-40TE25 Rohm Semiconductor, RB051L-40TE25 Datasheet - Page 2
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RB051L-40TE25
Manufacturer Part Number
RB051L-40TE25
Description
DIODE SCHOTTKY 20V 3A SOD106
Manufacturer
Rohm Semiconductor
Datasheet
1.RB051L-40TE25.pdf
(4 pages)
Specifications of RB051L-40TE25
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
450mV @ 3A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
1mA @ 20V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
3A
Forward Voltage Vf Max
450mV
Forward Surge Current Ifsm Max
70A
Operating Temperature Range
-40°C To +125°C
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
3 A
Max Surge Current
70 A
Configuration
Single
Forward Voltage Drop
0.45 V
Maximum Reverse Leakage Current
1000 uA @ 20 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB051L-40TE25TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RB051L-40TE25
Manufacturer:
Rohm Semiconductor
Quantity:
25 634
Company:
Part Number:
RB051L-40TE25
Manufacturer:
ROHM
Quantity:
1 412
Company:
Part Number:
RB051L-40TE25
Manufacturer:
SEK
Quantity:
1 000
Part Number:
RB051L-40TE25
Manufacturer:
ROHM/罗姆
Quantity:
20 000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
RB051L-40
400
390
380
370
360
350
0.001
300
250
200
150
100
0.01
50
300
250
200
150
100
0.1
10
0
50
0
1
0
1
Ta=125℃
FORWARD VOLTAGE:VF(mV)
100
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
VF DISPERSION MAP
IFSM DISRESION MAP
Ta=75℃
200
AVE:383.2mV
TIME:t(ms)
AVE:186.0A
300
10
Ifsm
400
Ifsm
Ta=-25℃
Ta=25℃
8.3ms
Ta=25℃
n=30pcs
IF=3A
500
t
1cyc
600
100
1000000
1000
100000
1000
100
10000
0.1
900
800
700
600
500
400
300
200
100
30
25
20
15
10
10
1000
5
0
1
0.001
100
0
10
1
0
Mounted on epoxy board
5
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
trr DISPERSION MAP
IR DISPERSION MAP
10
0.1
15
AVE:11.6ns
TIME:t(s)
AVE:110.0uA
IM=100mA
2/3
20
1ms
300us
25
10
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
time
Irr=0.25*IR
30
Ta=25℃
n=10pcs
IF=0.5A
IR=1A
Rth(j-a)
Rth(j-c)
IF=1A
Ta=25℃
VR=20V
n=30pcs
35
1000
40
1000
900
890
880
870
860
850
840
830
820
810
800
300
250
200
150
100
3
2
1
0
100
50
10
0
0
1
0
IFSM-CYCLE CHARACTERISTICS
1
FORWARD CURRENT:Io(A)
5
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Io-Pf CHARACTERISTICS
Sin(θ=180)
AVERAGE RECTIFIED
Ct DISPERSION MAP
NUMBER OF CYCLES
10
2
AVE:850.8pF
Ifsm
15
10
3
8.3ms
20
2011.04 - Rev.B
1cyc
f=1MHz
D=1/2
Ta=25℃
n=10pcs
f=1MHz
VR=0V
4
8.3ms
25
Data Sheet
DC
30
100
5