STPSC406B-TR STMicroelectronics, STPSC406B-TR Datasheet

DIODE SCHOTTKY 600V 4A DPAK

STPSC406B-TR

Manufacturer Part Number
STPSC406B-TR
Description
DIODE SCHOTTKY 600V 4A DPAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPSC406B-TR

Voltage - Forward (vf) (max) @ If
1.9V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
50µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
200pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10103-2

Available stocks

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Quantity
Price
Part Number:
STPSC406B-TR
Manufacturer:
ST
Quantity:
20 000
Part Number:
STPSC406B-TR
Manufacturer:
ST
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Features
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
September 2009
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC boost diode
600 V power Schottky silicon carbide diode
Doc ID 16283 Rev 1
Table 1.
Q
T
V
I
j (max)
F(AV)
C (typ)
RRM
Device summary
K
STPSC406B
STPSC406D
TO-220AC
K
DPAK
NC
STPSC406
A
K
A
175 °C
600 V
3 nC
4 A
www.st.com
1/8
8

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STPSC406B-TR Summary of contents

Page 1

... ST SiC diodes will boost the performance of PFC operations in hard switching conditions. September 2009 600 V power Schottky silicon carbide diode Table 1. I F(AV) V RRM T j (max (typ) Doc ID 16283 Rev 1 STPSC406 TO-220AC STPSC406D DPAK STPSC406B Device summary 4 A 600 V 175 ° www.st.com 1/8 8 ...

Page 2

Characteristics 1 Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol V Repetitive peak reverse voltage RRM I Forward rms current F(RMS) Average forward I F(AV) current Surge non repetitive I FSM forward current Repetitive ...

Page 3

STPSC406 Figure 1. Forward voltage drop versus forward current (typical values =25 °C =25 ° 0.0 0.5 1.0 1.5 2.0 Figure 3. Peak forward current versus case ...

Page 4

Characteristics Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (DPAK) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse 0.1 0.0 1.E-05 1.E-04 1.E-03 1.E-02 Figure 9. Total capacitive charges versus dI 7 ...

Page 5

STPSC406 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: convection (C) ● Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on ...

Page 6

Package information Table 7. DPAK dimensions 0.60 MIN. Figure 10. Footprint (dimensions in mm) 6/8 Ref 6.7 3 6.7 Doc ID 16283 Rev 1 ...

Page 7

... STPSC406 3 Ordering information Table 8. Ordering information Order code STPSC406D STPSC406B-TR 4 Revision history Table 9. Document revision history Date 24-Sep-2009 Marking Package STPSC406D TO-220AC STPSC406B DPAK Revision 1 First issue. Doc ID 16283 Rev 1 Ordering information Weight Base qty Delivery mode 1. Tube 0.3g 2500 Tape and reel ...

Page 8

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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