STPSC406B-TR STMicroelectronics, STPSC406B-TR Datasheet - Page 3

• Manufacturer Part Number: STPSC406B-TR
• Description: DIODE SCHOTTKY 600V 4A DPAK
• Manufacturer: STMicroelectronics

Specifications of STPSC406B-TR

• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 200pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10103-2

STPSC406
Figure 1.
Figure 3.
Figure 5.
150
125
100
8
7
6
5
4
3
2
1
0
35
30
25
20
15
10
5
0
75
50
25
0.0
0
0
1
δ=0.1
δ=0.3
δ=0.5
δ=1
d=1
0.5
25
δ=0.7
d=0.7
Forward voltage drop versus
forward current (typical values)
Peak forward current versus case
temperature (TO-220AC)
Junction capacitance versus
reverse voltage applied
(typical values)
1.0
50
T
T
j
j
=25 °C
=25 °C
10
T
1.5
C
75
(°C)
V
R
(V)
2.0
100
100
2.5
125
T
T
j
j
=175 °C
=175 °C
V
OSC
δ
V
=tp/T
F=1 MHz
T
T
T
FM
j
j
=30 mV
=150 °C
=150 °C
j
=25 °C
150
3.0
(V)
Doc ID 16283 Rev 1
T
RMS
tp
1000
175
3.5
Figure 2.
Figure 4.
Figure 6.
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
1.E-02
35
30
25
20
15
10
5
0
1.E-05
0
Single pulse
δ=0.3
δ=0.5
0
δ=1
d=1
δ=0.1
50
1.E-04
25
δ=0.7
d=0.7
Reverse leakage current versus
reverse voltage applied
(maximum values)
Peak forward current versus case
temperature (DPAK)
Relative variation of thermal
impedance junction to case
versus pulse duration (TO-220AC)
100
T
T
j
j
=150 °C
=150 °C
150
50
1.E-03
200
75
T
250
T
T
C
j
j
=175 °C
=175 °C
(°C)
1.E-02
300
100
350
T
T
t
p
j
j
=25 °C
=25 °C
1.E-01
(s)
400
125
Characteristics
450
1.E+00
δ
=tp/T
500
150
V
R
(V)
T
550
1.E+01
tp
175
600
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