STPSC406B-TR STMicroelectronics, STPSC406B-TR Datasheet - Page 4

• Manufacturer Part Number: STPSC406B-TR
• Description: DIODE SCHOTTKY 600V 4A DPAK
• Manufacturer: STMicroelectronics

Specifications of STPSC406B-TR

• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 200pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10103-2

Characteristics
Figure 9.
4/8
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-05
Single pulse
1.E-04
Total capacitive charges versus dI
Relative variation of thermal
impedance junction to case
versus pulse duration (DPAK)
1.E-03
1.E-02
7
6
5
4
3
2
1
0
0
1.E-01
Tj=150 °C
V
50
R
I
F
=400 V
=4 A
1.E+00
100
t
p
(s)
150
Doc ID 16283 Rev 1
1.E+01
200
F
/dt (typical values)
250
Figure 8.
1.E+03
1.E+02
1.E+01
1.E+00
300
1.E-05
350
dI
F
/dt(A/µs)
400
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
1.E-04
450
500
1.E-03
T
c
=125 °C
t
p
T
(s)
c
=25 °C
1.E-02
1.E-01
STPSC406
1.E+00