1N5819RLG ON Semiconductor, 1N5819RLG Datasheet - Page 2

DIODE SCHOTTKY 40V 1A DO41

1N5819RLG

Manufacturer Part Number
1N5819RLG
Description
DIODE SCHOTTKY 40V 1A DO41
Manufacturer
ON Semiconductor
Datasheet

Specifications of 1N5819RLG

Voltage - Forward (vf) (max) @ If
600mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
40V
Avg. Forward Curr (max)
1
Rev Curr
1000uA
Peak Non-repetitive Surge Current (max)
25A
Forward Voltage
0.9V
Operating Temp Range
-65C to 125C
Package Type
DO-41
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A @ Ta=55C
Max Surge Current
25 A
Forward Voltage Drop
0.9 V @ 3 A
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
1A
Forward Voltage Vf Max
600mV
Forward Surge Current Ifsm Max
25A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Compliant
Other names
1N5819RLGOSTR

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non−Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1), (V
R
Ambient Temperature (Rated V
Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,
half−wave, single phase 60 Hz, T
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
qJA
= 80°C/W, P.C. Board Mounting, see Note 2, T
R
(dc), P
L
Characteristic
Characteristic
= 70°C)
(Note 1)
Rating
F(AV)
(T
L
= 0, R
= 25°C unless otherwise noted) (Note 1)
R(equiv)
1N5817, 1N5818, 1N5819
qJA
A
= 55°C)
= 80°C/W)
≤ 0.2 V
http://onsemi.com
R
(dc), T
2
L
(T
= 90°C,
(T
(i
(i
(i
L
F
F
F
L
= 100°C)
= 0.1 A)
= 1.0 A)
= 3.0 A)
= 25°C)
Symbol
V
Symbol
Symbol
T
V
V
V
T
R(RMS)
R
I
J
RWM
FSM
RRM
V
J(pk)
RSM
T
, T
I
v
I
qJA
O
R
A
F
R
stg
1N5817
1N5817
0.32
0.45
0.75
1.0
20
24
14
85
10
25 (for one cycle)
−65 to +125
1N5818
1N5818
0.875
Max
0.33
0.55
150
1.0
1.0
30
36
21
80
80
10
1N5819
1N5819
0.34
0.6
0.9
1.0
40
48
28
75
10
°C/W
Unit
Unit
Unit
mA
°C
°C
°C
V
V
V
A
A
V

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