MBRM120ET3G ON Semiconductor, MBRM120ET3G Datasheet - Page 2

• Manufacturer Part Number: MBRM120ET3G
• Description: DIODE SCHOTTKY 20V 1A POWERMITE
• Manufacturer: ON Semiconductor

Specifications of MBRM120ET3G

• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: Powermite®
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.595 V @ 2 A
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRM120ET3GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MBRM120ET1
MBRM120ET1G
MBRM120ET3
MBRM120ET3G
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (At Rated V
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated V
Thermal Resistance − Junction−to−Lead (Anode) (Note 1)
Thermal Resistance − Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 1)
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(I
(I
(I
(V
(V
(V
Working Peak Reverse Voltage
DC Blocking Voltage
(At Rated V
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
F
F
F
R
R
R
= 0.1 A)
= 1.0 A)
= 2.0 A)
= 20 V)
= 10 V)
= 5.0 V)
R
, Square Wave, 20 kHz, T
Device
R
, T
Rating
Rating
Rating
J
= 25°C)
C
= 135°C)
R
, T
C
= 130°C)
http://onsemi.com
MBRM120E
POWERMITE
POWERMITE
POWERMITE
POWERMITE
(Pb−Free)
(Pb−Free)
Package
2
Symbol
Symbol
Symbol
V
V
dv/dt
R
I
I
T
R
FRM
FSM
RWM
V
R
RRM
V
T
I
tjtab
I
stg
O
R
tja
R
J
tjl
F
T
T
12,000 / Tape & Reel
J
J
0.455
0.530
0.595
3000 / Tape & Reel
= 25°C
= 25°C
1.0
0.5
10
−65 to 150
−65 to 150
Shipping
10,000
Value
Value
Value
277
1.0
2.0
20
50
35
23
T
T
J
J
0.360
0.455
0.540
= 100°C
= 100°C
1600
†
500
300
°C/W
V/ms
Unit
Unit
Unit
°C
°C
mA
V
A
A
A
V