MBRM120ET3G ON Semiconductor, MBRM120ET3G Datasheet - Page 5

• Manufacturer Part Number: MBRM120ET3G
• Description: DIODE SCHOTTKY 20V 1A POWERMITE
• Manufacturer: ON Semiconductor

Specifications of MBRM120ET3G

• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: Powermite®
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.595 V @ 2 A
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRM120ET3GOSTR

0.001
0.001
0.01
0.01
1.0
0.1
1.0
0.1
0.00001
0.00001
50%
20%
10%
5.0%
2.0%
1.0%
50%
20%
10%
5.0%
2.0%
1.0%
0.0001
0.0001
Rtjl(t) = Rtjl*r(t)
Figure 10. Thermal Response Junction to Ambient
0.001
Figure 9. Thermal Response Junction to Lead
0.001
Rtjl(t) = Rtjl*r(t)
0.01
http://onsemi.com
MBRM120E
0.01
T, TIME (s)
T, TIME (s)
5
0.1
0.1
1.0
1.0
10
10
100
100
1,000