MBRM140T1G ON Semiconductor, MBRM140T1G Datasheet - Page 2

• Manufacturer Part Number: MBRM140T1G
• Description: DIODE SCHOTTKY 40V 1A POWERMITE
• Manufacturer: ON Semiconductor

Specifications of MBRM140T1G

• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: Powermite®
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.85 V @ 3 A
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Current, Forward: 1 A
• Current, Reverse: 25 mA
• Current, Surge: 50 A
• Package Type: Case 457
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Voltage, Forward: 0.55 V
• Voltage, Reverse: 40 V
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 550mV
• Forward Surge Current Ifsm Max: 50A
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRM140T1GOSTR

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (At Rated V
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current,
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated V
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
1.0
0.1
10
(I
(I
(I
(V
(V
Working Peak Reverse Voltage
DC Blocking Voltage
(At Rated V
halfwave, single phase, 60 Hz)
F
F
F
R
R
0.1
= 0.1 A)
= 1.0 A)
= 3.0 A)
= 40 V)
= 20 V)
T
v
J
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
= 85°C
T
J
= 125°C
R
Figure 1. Typical Forward Voltage
, Square Wave, 100 kHz, T
0.3
T
J
= −40°C
0.5
T
R
J
, T
Rating
Rating
Rating
= 25°C
J
= 25°C)
C
0.7
= 110°C)
R
, T
C
= 110°C)
0.9
http://onsemi.com
MBRM140
2
100
1.0
0.1
10
0.1
V
T
F
J
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
= 85°C
Figure 2. Maximum Forward Voltage
Symbol
Symbol
Symbol
V
V
R
dv/dt
T
I
I
T
R
FRM
FSM
RWM
V
R
RRM
V
I
T
tjtab
I
J
stg
O
R
tja
R
J
tjl
F
= 125°C
0.3
T
T
J
J
(VOLTS)
0.36
0.55
0.85
0.15
= 25°C
= 25°C
0.5
0.5
T
J
−55 to 150
−55 to 125
= 25°C
10,000
Value
Value
Value
277
1.0
2.0
40
50
35
23
T
T
J
J
0.515
0.30
0.88
= 85°C
= 85°C
25
18
0.7
°C/W
V/ms
Unit
Unit
Unit
mA
°C
°C
V
A
A
A
V
0.9