MBRM140T1G ON Semiconductor, MBRM140T1G Datasheet - Page 3

• Manufacturer Part Number: MBRM140T1G
• Description: DIODE SCHOTTKY 40V 1A POWERMITE
• Manufacturer: ON Semiconductor

Specifications of MBRM140T1G

• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: Powermite®
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.85 V @ 3 A
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Current, Forward: 1 A
• Current, Reverse: 25 mA
• Current, Surge: 50 A
• Package Type: Case 457
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Voltage, Forward: 0.55 V
• Voltage, Reverse: 40 V
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 550mV
• Forward Surge Current Ifsm Max: 50A
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRM140T1GOSTR

100E−6
1.0E−3
1.0E−6
10E−3
10E−6
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
10
0
25
0
0
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
T
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
J
may be calculated from the equation:
35
5.0
SQUARE WAVE
Figure 3. Typical Reverse Current
45
V
I
I
V
T
I
pk
pk
Figure 5. Current Derating
I
R
pk
pk
10
R
L
, REVERSE VOLTAGE (VOLTS)
10
/I
/I
dc
, LEAD TEMPERATURE (°C)
, REVERSE VOLTAGE (VOLTS)
/I
/I
55
o
o
Figure 7. Capacitance
o
o
= 20
= 10
= p
= 5
15
65
T
T
J
J
75
20
= 85°C
= 25°C
20
85
25
T
95
J
FREQ = 20 kHz
= 25°C
30
J
J
30
105
therefore must include forward and reverse power effects. The allowable operating
due to reverse bias under DC conditions only and is calculated as T
T
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
J
= T
http://onsemi.com
35
115
Jmax
MBRM140
125
40
40
− r(t)(Pf + Pr) where
3
100E−3
100E−6
1.0E−3
10E−6
10E−3
125
105
115
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
95
85
75
0
Figure 8. Typical Operating Temperature Derating*
0
0
51°C/W
0
I
pk
69°C/W
/I
5.0
0.2
I
O
o
Figure 6. Forward Power Dissipation
, AVERAGE FORWARD CURRENT (AMPS)
= 20
Figure 4. Maximum Reverse Current
V
R
83.53°C/W
V
, DC REVERSE VOLTAGE (VOLTS)
I
pk
R
0.4
10
, REVERSE VOLTAGE (VOLTS)
10
/I
o
= 10
0.6
15
R
I
T
pk
tja
T
J
/I
J
= 25°C
o
0.8
= 33.72°C/W
20
= 85°C
20
= 5
96°C/W
I
pk
/I
1.0
25
o
= p
J
SQUARE
= T
1.2
30
WAVE
30
Jmax
1.4
35
− r(t)Pr,
dc
1.6
40
40