MBRM140T1G ON Semiconductor, MBRM140T1G Datasheet - Page 4

DIODE SCHOTTKY 40V 1A POWERMITE

MBRM140T1G

Manufacturer Part Number
MBRM140T1G
Description
DIODE SCHOTTKY 40V 1A POWERMITE
Manufacturer
ON Semiconductor
Datasheets

Specifications of MBRM140T1G

Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
Powermite®
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Configuration
Single
Forward Voltage Drop
0.85 V @ 3 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Current, Forward
1 A
Current, Reverse
25 mA
Current, Surge
50 A
Package Type
Case 457
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-55 to +125 °C
Voltage, Forward
0.55 V
Voltage, Reverse
40 V
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
1A
Forward Voltage Vf Max
550mV
Forward Surge Current Ifsm Max
50A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRM140T1GOSTR

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0.001
0.001
0.01
0.01
1.0
0.1
1.0
0.1
0.00001
0.00001
5.0%
2.0%
1.0%
50%
20%
10%
50%
20%
10%
5.0%
2.0%
1.0%
0.0001
0.0001
Rtjl(t) = Rtjl*r(t)
Figure 10. Thermal Response Junction to Ambient
0.001
Figure 9. Thermal Response Junction to Lead
0.001
Rtjl(t) = Rtjl*r(t)
0.01
http://onsemi.com
0.01
T, TIME (s)
MBRM140
T, TIME (s)
4
0.1
0.1
1.0
1.0
10
10
100
1,000
100

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