MBR160G ON Semiconductor, MBR160G Datasheet - Page 3

DIODE SCHOTTKY 1A 60V DO-41

MBR160G

Manufacturer Part Number
MBR160G
Description
DIODE SCHOTTKY 1A 60V DO-41
Manufacturer
ON Semiconductor
Datasheets

Specifications of MBR160G

Voltage - Forward (vf) (max) @ If
750mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
1 A @ Ta=55C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
1 V @ 3 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Current, Forward
1 A
Current, Reverse
5 mA
Current, Surge
25 A
Package Type
DO-41
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
1 V
Voltage, Reverse
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR160G
MBR160GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR160G
Manufacturer:
ON
Quantity:
3 000
NOTE 1. — MOUNTING DATA:
(R
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Data shown for thermal resistance junction−to−ambient
qJA)
Mounting
90
80
70
60
50
40
30
20
10
Method
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
for the mounting shown is to be used as a typical
0
1
2
3
0.1
Figure 5. Steady−State Thermal Resistance
Typical Values for R
1/8
0.2
1/4
BOTH LEADS TO HEATSINK,
1/8
52
67
L, LEAD LENGTH (INCHES)
Lead Length, L (in)
0.5
EQUAL LENGTH
MAXIMUM
3/8
1/4
65
80
1.0
1/2
qJA
1/2
72
87
50
in Still Air
2.0
TYPICAL
5/8
100
THERMAL CHARACTERISTICS
3/4
85
3/4
5.0
Figure 4. Thermal Response
MBR150, MBR160
°C/W
°C/W
°C/W
R
http://onsemi.com
7/8
qJA
10
t, TIME (ms)
1.0
20
3
.
200
100
80
70
60
50
40
30
20
0
50
T
R
A(A)
qS(A)
DT
DT
temperature r(t) = normalized value of transient thermal resistance
at time, t, from Figure 4, i.e.: r(t) = r(t
transient thermal resistance at time, t
NOTE 2. — THERMAL CIRCUIT MODEL:
10
(For heat conduction through the leads)
JL
JL
t
T
Z
p
100
L(A)
qJL(t)
= P
= the increase in junction temperature above the lead
pk
R
20
Figure 6. Typical Capacitance
qL(A)
= Z
• R
t
1
200
V
qJL
P
qJL
R
pk
30
T
, REVERSE VOLTAGE (VOLTS)
C(A)
• r(t)
[D + (1 − D) • r(t
R
qJ(A)
40
T
P
500
J
pk
TIME
50
P
R
)
D
1
q J(K
1
1 k
1
+ t
DUTY CYCLE, D = t
PEAK POWER, P
of an equivalent square
power pulse.
+ t
60
+ t
p
p
) + r(t
p
T
) = normalized value of
.
C(K)
T
f = 1 MHz
70
2 k
p
J
R
) − r(t
= 25°C
qL(K)
80
1
)] where
T
L(K)
pk
, is peak
p
5 k
R
/t
90
T
1
qS(K)
A(K)
10 k
100

Related parts for MBR160G