RB160M-40TR Rohm Semiconductor, RB160M-40TR Datasheet - Page 2

• Manufacturer Part Number: RB160M-40TR
• Description: DIODE SCHOTTKY 40V 1A SOD123
• Manufacturer: Rohm Semiconductor

Specifications of RB160M-40TR

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 510mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 30µA @ 40V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 510mV
• Forward Surge Current Ifsm Max: 30A
• Operating Temperature Range: -40°C To +150°C
• Diode Case: RoHS Compliant
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Configuration: Single
• Forward Voltage Drop: 0.51 V
• Maximum Reverse Leakage Current: 30 uA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Diodes
Electrical characteristic curves (Ta=25°C)
1000
100
200
150
100
480
470
460
450
440
430
200
150
100
10
50
50
1
0
0
0.1
0
Ta=150℃
Ta=125℃
100
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=75℃
VF DISPERSION MAP
IFSM DISRESION MAP
200
1
AVE:454.3mV
TIME:t(ms)
AVE:83.0A
300
Ifsm
Ifsm
400
10
Ta=-25℃
8.3ms
Ta=25℃
Ta=25℃
t
500
n=30pcs
VF=1A
1cyc
600
100
10000
0.001
1000
0.01
1000
100
0.1
30
25
20
15
10
100
30
25
20
15
10
10
0.1
10
5
0
5
0
1
1
0.001
0
Mounted on epoxy board
5
IM=10mA
0.01
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
1ms
10
trr DISPERSION MAP
IR DISPERSION MAP
300us
AVE:4.08uA
0.1
time
15
AVE:10.4ns
TIME:t(s)
IF=0.5A
20
1
25
10
Ta=125℃
30
Ta=75℃
Ta=25℃
Ta=-25℃
Irr=0.25*IR
Ta=25℃
n=10pcs
IF=0.5A
Ta=25℃
VR=40V
n=30pcs
IR=1A
100
Rth(j-c)
Rth(j-a)
35
1000
40
1000
100
300
290
280
270
260
250
240
230
220
210
200
100
80
60
40
20
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
0
1
1
0
1
0
0
Ifsm
Sin(θ＝180)
IFSM-CYCLE CHARACTERISTICS
5
FORWARD CURRENT：Io(A)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Io-Pf CHARACTERISTICS
AVERAGE RECTIFIED
0.5
Ct DISPERSION MAP
NUMBER OF CYCLES
8.3ms
10
1cyc
AVE:279.7pF
8.3ms
Rev.E
RB160M-40
10
15
1
D=1/2
20
1.5
Ta=25℃
n=10pcs
f=1MHz
VR=0V
f=1MHz
25
DC
100
2
30
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