BAS516,115 NXP Semiconductors, BAS516,115 Datasheet - Page 3

• Manufacturer Part Number: BAS516,115
• Description: DIODE SW 75V 250MA HS SOD523
• Manufacturer: NXP Semiconductors

Specifications of BAS516,115

• Package / Case: SC-79, SOD-523
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 85V
• Avg. Forward Curr (max): 0.25
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: SOD-523
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1603-2; 934055217115; BAS516 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Soldering point of the cathode tab.
1998 Aug 31
V
I
C
t
V
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
fr
High-speed diode
d
th j-s
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
R
when switched from I
L
I
I
I
I
V
V
V
V
F
F
F
F
= 100 Ω; measured at I
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 75 V
= 25 V; T
= 75 V; T
R
= 0; see Fig.6
j
j
= 150 °C
= 150 °C;
3
CONDITIONS
F
F
= 10 mA to I
= 10 mA; t
note 1
R
= 1 mA; see Fig.7
CONDITIONS
r
= 20 ns; see Fig.8
R
= 10 mA;
715
855
1
1.25
30
1
30
50
1
4
1.75
VALUE
Product data sheet
MAX.
120
BAS516
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
UNIT
UNIT
K/W