BAS516,115 NXP Semiconductors, BAS516,115 Datasheet - Page 5

• Manufacturer Part Number: BAS516,115
• Description: DIODE SW 75V 250MA HS SOD523
• Manufacturer: NXP Semiconductors

Specifications of BAS516,115

• Package / Case: SC-79, SOD-523
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 85V
• Avg. Forward Curr (max): 0.25
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: SOD-523
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1603-2; 934055217115; BAS516 T/R

NXP Semiconductors
1998 Aug 31
High-speed diode
(nA)
Fig.5
I R
10
10
10
10
10
5
4
3
2
0
max
Reverse current as a function of junction
temperature.
typ
V
R
typ
= 75 V
75 V
25 V
100
T ( C)
j
o
MGA884
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
0.6
0.4
0.2
0
0
j
Diode capacitance as a function of
reverse voltage; typical values.
= 25 °C.
4
8
12
Product data sheet
V R (V)
BAS516
MBK881
16