BAV21,113 NXP Semiconductors, BAV21,113 Datasheet - Page 2

• Manufacturer Part Number: BAV21,113
• Description: DIODE GEN PURP 250V 250MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAV21,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: General Purpose Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 9 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933189210113; BAV21 T/R; BAV21 T/R

NXP Semiconductors
FEATURES
• Hermetically sealed leaded glass
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
• Repetitive peak reverse voltage:
• Repetitive peak forward current:
APPLICATIONS
• General purposes in industrial
1999 May 25
SOD27 (DO-35) package
max. 150 V, 200 V
max. 200 V, 250 V
max. 625 mA.
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
General purpose diodes
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
The diodes are type branded.
handbook, halfpage
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
2
k
BAV20; BAV21
a
Product data sheet
MAM246