BAV21,113 NXP Semiconductors, BAV21,113 Datasheet - Page 7

• Manufacturer Part Number: BAV21,113
• Description: DIODE GEN PURP 250V 250MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAV21,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: General Purpose Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 9 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933189210113; BAV21 T/R; BAV21 T/R

NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
handbook, full pagewidth
t r
t p
t
D.U.T.
10%
I F
I F
Ω
t rr
R = 50
S
SAMPLING
t
OSCILLOSCOPE
Ω
R = 50
V = V
I x R
R
F
S
i
(1)
90%
V R
MGA881
input signal
output signal
(1) I
= 3 mA.
R
Fig.8 Reverse recovery voltage test circuit and waveforms.
1999 May 25
7