BAW62,143 NXP Semiconductors, BAW62,143 Datasheet - Page 2

• Manufacturer Part Number: BAW62,143
• Description: DIODE SW HI-SPEED 75V DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAW62,143

• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933101220143

NXP Semiconductors
FEATURES
• Hermetically sealed leaded glass
• High switching speed: max. 4 ns
• Continuous reverse voltage:
• Repetitive peak reverse voltage:
• Repetitive peak forward current:
APPLICATIONS
• High-speed switching
• Fast logic applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 17
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
SOD27 (DO-35) package
max. 75 V
max. 75 V
max. 450 mA.
stg
j
RRM
R
tot
High-speed diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
DESCRIPTION
The BAW62 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
The diode is type branded.
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
handbook, halfpage
amb
t = 1 μs
t = 1 ms
t = 1 s
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
= 25 °C; note 1
2
CONDITIONS
k
j
= 25 °C prior to
MIN.
−65
−
−
−
−
−
−
−
−
−
a
Product data sheet
MAX.
250
450
350
200
+200
75
75
MAM246
4
1
0.5
BAW62
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT