BAS321,115 NXP Semiconductors, BAS321,115 Datasheet - Page 3

• Manufacturer Part Number: BAS321,115
• Description: DIODE GP 250V 250MA SOD323
• Manufacturer: NXP Semiconductors

Specifications of BAS321,115

• Package / Case: SC-76, SOD-323, UMD2
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 250 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 0.25 A
• Max Surge Current: 9 A
• Reverse Current Ir: 0.1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055352115::BAS321 T/R::BAS321 T/R

NXP Semiconductors
CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Notes
1. Soldering point of cathode tab.
2. Device mounted on an FR4 printed circuit board.
2004 Jan 26
V
I
C
t
R
R
SYMBOL
j
R
rr
SYMBOL
= 25 °C unless otherwise specified.
F
General purpose diode
d
th(j-s)
th(j-a)
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
forward voltage
reverse current
diode capacitance
reverse recovery time
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
I
R
R
3
I
I
V
V
= 30 mA; R
= 3 mA; see Fig.8
F
F
R
R
= 100 mA
= 200 mA
= 200 V
= 200 V; T
T
note 2
s
R
= 90°C; note 1
CONDITIONS
L
= 0; see Fig.6
= 100 Ω; measured at
j
= 150 °C
CONDITIONS
F
= 30 mA to
1
1.25
100
100
2
50
VALUE
Product data sheet
MAX.
130
366
BAS321
V
V
nA
µA
pF
ns
UNIT
UNIT
K/W
K/W