BAS321,115 NXP Semiconductors, BAS321,115 Datasheet - Page 6

• Manufacturer Part Number: BAS321,115
• Description: DIODE GP 250V 250MA SOD323
• Manufacturer: NXP Semiconductors

Specifications of BAS321,115

• Package / Case: SC-76, SOD-323, UMD2
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 250 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 0.25 A
• Max Surge Current: 9 A
• Reverse Current Ir: 0.1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055352115::BAS321 T/R::BAS321 T/R

NXP Semiconductors
2004 Jan 26
handbook, full pagewidth
General purpose diode
(1) I
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance)
V = V
R
= 3 mA
R = 50
S
R
I x R
F
Ω
S
r
= 0.35 ns;
I F
D.U.T.
r
= 0.6 ns; reverse voltage pulse duration t
Fig.8 Reverse recovery time and waveforms.
OSCILLOSCOPE
SAMPLING
R = 50
MGA881
i
Ω
V R
6
10%
t r
p
= 100 ns; duty factor δ = 0.05;
90%
input signal
t p
t
I F
output signal
Product data sheet
BAS321
t rr
(1)
t