BAT54L,315 NXP Semiconductors, BAT54L,315 Datasheet - Page 4

• Manufacturer Part Number: BAT54L,315
• Description: DIODE SCHOTTKY 30V 200MA SOD882
• Manufacturer: NXP Semiconductors

Specifications of BAT54L,315

• Package / Case: SOD-882
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Current - Average Rectified (io): 200mA (DC)
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Single
• Forward Voltage Drop: 0.8 V
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057248315::BAT54L T/R::BAT54L T/R

NXP Semiconductors
GRAPHICAL DATA
2003 Jun 23
handbook, halfpage
handbook, halfpage
Schottky barrier diode
(1) T
(2) T
(3) T
Fig.2
f = 1 MHz; T
Fig.4
(mA)
I F
10
(pF)
10
10
C d
10
15
1
10
amb
amb
amb
0
5
3
2
1
0
0
(1)
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 °C.
(3)
10
0.4
(1)
(2)
0.8
20
(3)
V F (V)
V R (V)
MSA891
MSA892
1.2
30
4
(1) T
(2) T
(3) T
Fig.3
(μA)
I
R
10
10
10
10
amb
amb
amb
3
2
1
1
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
10
20
Product data sheet
V
R
(1)
(2)
(3)
(V)
BAT54L
MSA893
30