BAS21J,115 NXP Semiconductors, BAS21J,115 Datasheet - Page 4

• Manufacturer Part Number: BAS21J,115
• Description: DIODE HIGH SPEED SWITCHING SC-90
• Manufacturer: NXP Semiconductors

Specifications of BAS21J,115

• Package / Case: SC-90, SOD-323F
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 300V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Switching Diodes
• Peak Reverse Voltage: 300 V
• Forward Continuous Current: 250 mA
• Max Surge Current: 3 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 150 nA
• Operating Temperature Range: + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060933115::BAS21J T/R::BAS21J T/R

NXP Semiconductors
7. Characteristics
BAS21J_1
Product data sheet
Table 7.
T
[1]
[2]
Symbol Parameter
V
I
C
t
R
rr
amb
F
d
Pulse test: t
When switched from I
= 25 C unless otherwise specified.
forward voltage
reverse current
diode capacitance
reverse recovery time
Characteristics
p
300 s;
F
= 30 mA to I
Rev. 01 — 8 March 2007
0.02.
R
Conditions
I
V
V
V
= 30 mA; R
F
R
R
R
= 100 mA
= 250 V
= 250 V; T
= 0 V; f = 1 MHz
L
= 100 ; measured at I
j
= 150 C
Single high-speed switching diode
[1]
[2]
Min
-
-
-
-
-
R
= 3 mA.
Typ
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
BAS21J
Max
1.1
150
50
2
50
Unit
V
nA
pF
ns
4 of 10
A