BAS21J,115 NXP Semiconductors, BAS21J,115 Datasheet - Page 5

DIODE HIGH SPEED SWITCHING SC-90

BAS21J,115

Manufacturer Part Number
BAS21J,115
Description
DIODE HIGH SPEED SWITCHING SC-90
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS21J,115

Package / Case
SC-90, SOD-323F
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
150nA @ 250V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Voltage - Dc Reverse (vr) (max)
300V
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Current - Average Rectified (io)
250mA (DC)
Product
Switching Diodes
Peak Reverse Voltage
300 V
Forward Continuous Current
250 mA
Max Surge Current
3 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
150 nA
Operating Temperature Range
+ 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060933115::BAS21J T/R::BAS21J T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS21J,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BAS21J_1
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of junction
(mA)
(1) T
(2) T
(3) T
I
F
( A)
10
10
500
400
300
200
100
I
10
R
10
0
1
2
1
2
voltage; typical values
V
temperature; typical values
0
0
amb
amb
amb
R
= 250 V
= 150 C
= 75 C
= 25 C
40
0.5
80
(1)
(2)
120
(3)
1
V
160
F
(V)
T
mhc618
mhc619
j
( C)
200
1.5
Rev. 01 — 8 March 2007
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
I
(pF)
FSM
(A)
C
10
0.42
0.38
0.34
10
d
0.3
10
1
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
0
1
j
= 25 C; prior to surge
10
10
amb
Single high-speed switching diode
= 25 C
10
20
2
10
30
© NXP B.V. 2007. All rights reserved.
3
BAS21J
V
t
p
R
( s)
mbg703
mhc621
(V)
10
40
4
5 of 10

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