BAT54T,115 NXP Semiconductors, BAT54T,115 Datasheet - Page 3

• Manufacturer Part Number: BAT54T,115
• Description: DIODE SCHOTTKY 200MA SOT416 SC75
• Manufacturer: NXP Semiconductors

Specifications of BAT54T,115

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: EMT3 (SOT-416, SC-75-3)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063958115

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAT54T_1
Product data sheet
Table 6.
[1]
[2]
Table 7.
T
[1]
[2]
Symbol
R
R
Symbol
V
I
t
C
R
rr
amb
F
th(j-a)
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering point of cathode tab.
Pulse test: t
When switched from I
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
reverse recovery
time
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
p
≤ 300 μs; δ ≤ 0.02.
Rev. 01 — 14 December 2009
F
= 10 mA to I
Conditions
I
I
I
I
I
V
V
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
R
= 25 V
= 1 V; f = 1 MHz
= 10 mA; R
Conditions
in free air
L
= 100 Ω; measured at I
Single Schottky barrier diode
[1]
[2]
[1]
[2]
Min
-
-
Min
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
Typ
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
BAT54T
Max
833
350
Max
240
320
400
500
800
2
5
10
Unit
K/W
K/W
Unit
mV
mV
mV
mV
mV
μA
ns
pF
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