RB520S-30FTE61 Rohm Semiconductor, RB520S-30FTE61 Datasheet - Page 2

• Manufacturer Part Number: RB520S-30FTE61
• Description: DIODE SCHOTTKY 30V 200MA EMD2
• Manufacturer: Rohm Semiconductor

Specifications of RB520S-30FTE61

• Voltage - Forward (vf) (max) @ If: 600mV @ 200mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA
• Current - Reverse Leakage @ Vr: 1µA @ 10V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

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RB520S-30
10000
0.001
1000
30
25
20
15
10
1000
0.01
100
5
0
100
0.1
530
520
510
500
490
480
10
10
1
0.001
0
Ta=75℃
FORWARD VOLTAGE：VF(mV)
Mounted on epoxy board
IM=10mA
100
VF-IF CHARACTERISTICS
Rth-t CHARACTERISTICS
Ta=125℃
IFSM DISRESION MAP
1ms
VF DISPERSION MAP
300us
200
0.1
time
TIME:t(s)
AVE:507.6mV
AVE:5.60A
300
IF=100mA
Ifsm
400
10
8.3ms
Ta=-25℃
500
1cyc
IF=200mA
Ta=25℃
n=30pcs
Ta=25℃
Rth(j-a)
Rth(j-c)
600
1000
1000000
100000
0.3
0.2
0.1
10000
1000
1000
0
900
800
700
600
500
400
300
200
100
10
100
5
0
0
10
0
1
Sin(θ＝180)
1
0
IFSM-CYCLE CHARACTERISTICS
0.1
REVERSE VOLTAGE：VR(V)
FORWARD CURRENT：Io(A)
VR-IR CHARACTERISTICS
Io-Pf CHARACTERISTICS
D=1/2
NUMBER OF CYCLES
AVERAGE RECTIFIED
IR DISPERSION MAP
10
0.2
AVE:114nA
Ifsm
2/3
10
0.3
8.3ms
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=125℃
20
1cyc
8.3ms
DC
Ta=25℃
VR=10V
n=30pcs
0.4
100
30
0.5
0.008
0.006
0.004
0.002
0.01
100
10
10
50
45
40
35
30
25
20
15
10
5
0
1
5
0
0
1
0
0
Sin(θ＝180)
IFSM-t CHARACTERISTICS
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
REVERSE VOLTAGE:VR(V)
VR-P
5
Ct DISPERSION MAP
R
10
CHARACTERISTICS
10
TIME:t(ms)
AVE:28.2pF
D=1/2
10
15
20
DC
Ifsm
20
f=1MHｚ
Ta=25℃
f=1MHz
VR=0V
n=10pcs
2011.03 - Rev.D
t
25
Data Sheet
30
100
30