PMEG1020EV,115 NXP Semiconductors, PMEG1020EV,115 Datasheet

DIODE SCHOTTKY 10V 2S SOT666

PMEG1020EV,115

Manufacturer Part Number
PMEG1020EV,115
Description
DIODE SCHOTTKY 10V 2S SOT666
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PMEG1020EV,115

Package / Case
SS Mini-6 (SOT-666)
Voltage - Forward (vf) (max) @ If
460mV @ 2A
Voltage - Dc Reverse (vr) (max)
10V
Current - Average Rectified (io)
2A (DC)
Current - Reverse Leakage @ Vr
3mA @ 10V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
45pF @ 5V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
10 V
Forward Continuous Current
2 A
Configuration
Single
Forward Voltage Drop
0.46 V
Maximum Reverse Leakage Current
3 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057623115
PMEG1020EV T/R
PMEG1020EV T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PMEG1020EV
Ultra low V
MEGA Schottky barrier
F
rectifier
Product data sheet
2003 Jul 15

Related parts for PMEG1020EV,115

PMEG1020EV,115 Summary of contents

Page 1

DATA SHEET PMEG1020EV Ultra low V rectifier Product data sheet DISCRETE SEMICONDUCTORS M3D744 MEGA Schottky barrier F 2003 Jul 15 ...

Page 2

... NXP Semiconductors Ultra low V MEGA Schottky barrier F rectifier FEATURES • Forward current • Reverse voltage • Ultra low forward voltage • Ultra small plastic SMD package. APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion • Switch mode power supply • ...

Page 3

... NXP Semiconductors Ultra low V MEGA Schottky barrier F rectifier ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d Notes = 300 μs; δ = 0.02. 1. Pulse test For Schottky barrier rectifiers thermal runaway has to be considered some applications the reverse power losses (P ) are a significant part of the total power losses ...

Page 4

... NXP Semiconductors Ultra low V MEGA Schottky barrier F rectifier GRAPHICAL DATA 4 10 handbook, halfpage I F (mA (1) (2) ( 100 200 = 85 °C. (1) T amb = 25 °C. (2) T amb = −40 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 120 handbook, halfpage C d (pF) ...

Page 5

... NXP Semiconductors Ultra low V MEGA Schottky barrier F rectifier PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2003 Jul scale 1.3 1.7 0.3 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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