PMEG1020EV,115 NXP Semiconductors, PMEG1020EV,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG1020EV,115
• Description: DIODE SCHOTTKY 10V 2S SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PMEG1020EV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 460mV @ 2A
• Voltage - Dc Reverse (vr) (max): 10V
• Current - Average Rectified (io): 2A (DC)
• Current - Reverse Leakage @ Vr: 3mA @ 10V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 45pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 10 V
• Forward Continuous Current: 2 A
• Configuration: Single
• Forward Voltage Drop: 0.46 V
• Maximum Reverse Leakage Current: 3 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057623115; PMEG1020EV T/R; PMEG1020EV T/R

NXP Semiconductors
GRAPHICAL DATA
2003 Jul 15
handbook, halfpage
handbook, halfpage
Ultra low V
rectifier
(1) T
(2) T
(3) T
Fig.2
f = 1 MHz; T
Fig.4
(mA)
(pF)
C d
I F
120
100
10
10
10
80
60
40
20
10
amb
amb
amb
1
4
3
2
0
0
= 85 °C.
= 25 °C.
= −40 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
= 25 °C.
100
2
F
(1)
MEGA Schottky barrier
200
(2)
4
(3)
300
6
400
8
V F (mV)
V R (V)
MDB591
MDB196
500
10
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(μA)
I R
10
10
10
10
10
amb
amb
amb
1
5
4
3
2
0
= 85 °C.
= 25 °C.
= −40 °C.
Reverse current as a function of reverse
voltage; typical values.
2
(1)
(2)
(3)
4
6
PMEG1020EV
Product data sheet
8
V R (V)
MDB195
10